IDB09E120_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDB09E120
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V_R=800V, I_F=9A, di_F/dt=750A/µs, T_j=25°C
V_R=800V, I_F=9A, di_F/dt=750A/µs, T_j=125°C
V_R=800V, I_F=9A, di_F/dt=750A/µs, T_j=150°C
t_rr
- 140 -
- 200 -
- 210 -
Peak reverse current
V_R=800V, I_F = 9 A, di_F/dt=750A/µs, T_j=25°C
V_R=800V, I_F =9A, di_F/dt=750A/µs, T_j=125°C
V_R=800V, I_F =9A, di_F/dt=750A/µs, T_j=150°C
I_rrm
- 13.3 -
- 16.1 -
- 16.5 -
Reverse recovery charge
V_R=800V, I_F=9A, di_F/dt=750A/µs, T_j=25°C
V_R=800V, I_F =9A, di_F/dt=750A/µs, T_j=125°C
V_R=800V, I_F =9A, di_F/dt=750A/µs, T_j=150°C
Q_rr
- 950 -
- 1470 -
- 1600 -
Reverse recovery softness factor
S
V_R=800V, I_F=9A, di_F/dt=750A/µs, T_j=25°C
V_R=800V, I_F=9A, di_F/dt=750A/µs, T_j=125°C
V_R=800V, I_F=9A, di_F/dt=750A/µs, T_j=150°C
-
5.4
-
-
6.5
-
-
6.6
-
Unit
ns
A
nC
Rev.2.2
Page 3
2007-09-01