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IDB06S60C Datasheet, PDF (4/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode
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5 Typ. forward power dissipation vs.
average forward current
P F,AV=f(I F), T C=100 °C, parameter: D =t p/T
30
0.1
1
25
0.2
20
0.5
15
10
5
0
0
5
10
I F(AV) [A]
7 Transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
101
IDB06S60C
6 Typ. reverse current vs. reverse voltage
I R=f(V R)
parameter: T j
101
100
10-1
175 °C
10-2
100 °C
150 °C
25 °C
-55 °C
10-3
15
100
200
300
400
500
600
V R [V]
8 Typ. capacitance vs. reverse voltage
C =f(V R); T C=25 °C, f =1 MHz
400
0.5
100
0.2
0.1
0.05
10-1
0.02
0.01
single pulse
300
200
100
10-2
10-5
Rev. 2.1
10-4
10-3
10-2
t P [s]
10-1
0
10-1
page 4
100
101
102
V R [V]
103
2009-01-07
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