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| IDB06S60C Datasheet, PDF (1/7 Pages) Infineon Technologies AG – 2nd Generation thinQ SiC Schottky Diode | |||
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2ndGeneration thinQ!TM SiC Schottky Diode
Features
⢠Revolutionary semiconductor material - Silicon Carbide
⢠Switching behavior benchmark
⢠No reverse recovery/ No forward recovery
⢠No temperature influence on the switching behavior
⢠High surge current capability
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target applications
⢠Breakdown voltage tested at 5mA2)
Product Summary
V DC
Qc
IF
D2PAK
IDB06S60C
600 V
15 nC
6A
thinQ! 2G Diode designed for fast switching applications like:
⢠CCM PFC
⢠Motor Drives
Type
IDB06S60C
Package
D2PAK
Marking
D06S60C
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous forward current
IF
T C<135 °C
RMS forward current
I F,RMS f =50 Hz
Surge non-repetitive forward current,
sine halfwave
I F,SM
T C=25 °C, t p=10 ms
Repetitive peak forward current
I F,RM
T j=150 °C,
T C=100 °C, D =0.1
Non-repetitive peak forward current
i ²t value
Repetitive peak reverse voltage
Diode ruggedness dv/dt
Power dissipation
Operating and storage temperature
I F,max T C=25 °C, t p=10 µs
â«i 2dt
T C=25 °C, t p=10 ms
V RRM
dv/ dt VR=0â¦480V
P tot
T C=25 °C
T j, T stg
Pin 2
C
Pin 3
A
Value
6
9
46
24
210
10
600
50
52
-55 ... 175
Unit
A
A2s
V
V/ns
W
°C
Rev. 2.1
page 1
2009-01-07
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