GMRB6 Datasheet, PDF (4/4 Pages) Infineon Technologies AG – Giant Magneto Resistive Position Sensor

GMR B6
Output Voltage Degradation (typical) at
high Temperature Operation
100
AED02953
%
T_A = 105 ˚C
T_A = 125 ˚C
99
Magnetoresistive Effect (typical) versus
Temperature ∆R/R₀ = f(T_A)
120
AED02959
%
110
100
98
90
97
80
96
95
10²
T_A = 150 ˚C
10³
Operation Time
h 10⁴
70
60
-50 -10 30 70 110 ˚C 150
T
Basic Resistance (typical) versus
Temperature R₀ = f(T_A)
120
AED02954
%
110
100
90
80
-40 -20 0 20 40 60 80 100 ˚C 150
T
Data Sheet
4
2000-07-01