GMRB6 Datasheet, PDF (3/4 Pages) Infineon Technologies AG – Giant Magneto Resistive Position Sensor

GMR B6
Maximum Ratings
Parameter
Symbol
Operating temperature
T_A
Storage temperature
T_stg
Supply voltage
V₁
Thermal conductivity
G_thC A
Magnetic field¹⁾
H_rot
1) _{larger fields may reduce the magnetoresistive effect irreversibly}
Value
– 40 … + 150
– 50 … + 150
7
>4
< 15
Unit
°C
°C
V
mW/K
kA/m
Characteristics (T_A = 25 °C)
Parameter
Symbol
Value
Unit
Nominal supply voltage
V_1N
Basic resistance
R₀
Magnetoresistive effect
H_rot = 5 ... 15 kA/m
∆R/R₀
Output signal fullbridge @ V_1N = 5 V V_OUT
Offset voltage
@ V_1N = 5 V |V₀|
Temperature coefficient of
basic resistance
TC_R0
5
V
> 700
Ω
>4
%
> 200
mV
<8
mV
+ 0.09 … + 0.12
%/K
Temperature coefficient of
magnetoresistance
TC_∆R
– 0.12 … – 0.09
%/K
Temperature coefficient of
magnetoresistive effect
TC_∆R/R0
– 0.27 … – 0.23
%/K
Application Hints
The application mode of the GMR position sensor is preferably as a bridge or halfbridge
circuit. In every case this type of circuit compensates for the T_C of the resistance value
R₀. To compensate for the T_C of the GMR effect ∆R/R₀, if there is the necessity, is left to
the application circuit and can be done for example with a NIC circuit. When operated
over a complete 360° turn, a total signal of ≈ 20 mV/V is achieved at 25 °C with a
halfbridge. The output signal is doubled to of ≈ 40 mV/V when a fullbridge circuit is used.
In the case of linear position sensing, the electrical circuit remains unchanged.
Data Sheet
3
2000-07-01