CLY29 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel C-Band GaAs Power-MESFET

CLY29
Electrical Characteristics (continued)
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 9 V, I_D = 200 mA, f = 2.3 GHz,
P_in = 0 dBm
CLY29-00
13.5 15.0 -
CLY29-05
14.0 15.2 -
CLY29-10
14.0 15.2 -
Output power at 1dB gain compr. ¹⁾
P_1dB
V_DS = 9 V, I_{D(RF off)} = 200 mA, f = 2.3 GHz
CLY29-00
-
28.8 -
CLY29-05
-
29.3 -
CLY29-10
-
30.0 -
Output power ¹⁾
P_out
V_DS = 9 V, I_{D(RF off)} = 200 mA, f = 2.3 GHz,
P_in = 16.5 dBm
CLY29-00
28.5 28.8 -
CLY29-05
29.0 29.3 -
CLY29-10
29.5 30.0 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 9 V, I_{D(RF off)} = 200 mA, f = 2.3 GHz,
P_in = 16.5 dBm
CLY29-00
40
50
-
CLY29-05
45
52
-
CLY29-10
45
55
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 10
Draft D, September 99