CLX27 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – HiRel X-Band GaAs Power-MESFET

Electrical Characteristics (continued)
CLX27
Parameter
Symbol
Values
min. typ. max.
AC Characteristics
Linear power gain ¹⁾
G_lp
V_DS = 8 V, I_D = 120 mA, f = 2.3 GHz,
P_in = 0 dBm
CLX27-00
17.5 18.5 -
CLX27-05
18.0 19.0 -
CLX27-10
18.0 19.0 -
Power output at 1dB gain compr. ¹⁾
P_1dB
V_DS = 8 V, I_{D(RF off)} = 120 mA, f = 2.3 GHz
CLX27-00
-
26.5 -
CLX27-05
-
27.3 -
CLX27-10
-
27.8 -
Output Power ¹⁾
P_out
V_DS = 8 V, I_{D(RF off)} = 120 mA, f = 2.3 GHz,
P_in = 10.5 dBm
CLX27-00
26.0 26.5 -
CLX27-05
27.0 27.3 -
CLX27-10
27.5 27.8 -
Power added efficiency ^{1), 2)}
PAE
V_DS = 8 V, I_{D(RF off)} = 120 mA, f = 2.3 GHz,
P_in = 10.5 dBm
CLX27-00
45
50
-
CLX27-05
48
53
-
CLX27-10
50
55
-
Notes.:
1) RF Power characteristics given for power matching conditions
2) Power added efficiency: PAE = (P_RFout - P_RFin) / P_DC
Unit
dB
dBm
dBm
%
Semiconductor Group
4 of 9
Draft D, September 99