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CLX27 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – HiRel X-Band GaAs Power-MESFET
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Electrical Characteristics (at TA=25°C; unless otherwise specified)
CLX27
Parameter
DC Characteristics
Drain-source saturation current
VDS = 2 V, VGS = 0 V
Gate threshold voltage
VDS = 3 V, ID = 12 mA
Drain current at pinch-off, low VDS
VDS = 3 V, VGS = -3.5 V
Gate current at pinch-off, low VDS
VDS = 3 V, VGS = -3.5 V
Drain current at pinch-off, high VDS
VDS = 9.5 V, VGS = -3.5 V
Gate current at pinch-off, high VDS
VDS = 9.5 V, VGS = -3.5 V
Transconductance
VDS = 3 V, ID = 120 mA
Thermal resistance
Junction to soldering point
VDS = 8 V, ID = 120 mA, Ts = +25°C
Symbol
min.
Values
Unit
typ. max.
IDss
180 300 420 mA
-VGth
1.2 2.2
3.2 V
IDp3
-
-
60
µA
-IGp3
-
-
24
µA
IDp9.5
-
-
600 µA
-IGp9.5
-
-
240 µA
gm
130 160 -
mS
Rth JS
-
35
-
K/W
Semiconductor Group
3 of 9
Draft D, September 99
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