CGY353 Datasheet, PDF (4/6 Pages) Infineon Technologies AG – GaAs MMIC

GaAs Components
CGY 353
Electrical Characteristics
Conditions: V_D = 7.0 V, T_A = 25 °C, f = 3425 - 3450 MHz, Z_S = Z_L = 50 Ω,
pulsed operation mode, duty cycle = 30%, unless otherwise specified.
Parameters
Symbol
Limit Values
Unit
min. typ. max.
Test
Conditions
Supply current
Power down current
Supply current neg.
voltage
I_DD
I_Pdown
I_G
–
1.2 –
A
–
–
10 –
mA –
–
1
–
mA –
Gain at nominal
G
linear output power
–
21 –
dB –
Linear Output Power P_OUT
Saturation Output
Power
P_SAT
–
31 –
dBm P_IN = 12 dBm
–
33 –
dBm P_IN = 14 dBm
Overall Power added PAE
Efficiency
–
15 –
%
P_IN = 10 dBm
Adjacent channel
power¹⁾
ACP
–
–
– 30 dBc ± 156 kHz beside
carrier
Input return loss²⁾ S11
10 –
–
dB
P_IN = 10 dBm
Output return loss S22
8
–
–
dB
P_IN = 10 dBm
Noise Figure
NF
–
5
–
dB –
1) _{Modulation: π/4 DQPSK with an alpha = 0.4 root raised cosine filtered}
Symbol rate: 256 ksymbols/s.
Transmission burst: Each burst has a 500 s nominal duration with 20 dB of raised cosine shaping of 8 s
duration at the beginning and the end of the burst. A maximum of three bursts occur in each 5 ms period, but
consecutive bursts are separated by a minimum interval of 1 ms.
Duty cycle: 30%, 3 bursts per 5 ms frame with a minimum interval of 1 ms between bursts.
The modulation signal has a peak to mean envelope ratio of 3.1 dB.
2) _{Values of S11 and S22 with match as realized on application board.}
Data Sheet
4
2001-01-01