CFY66 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – HiRel K-Band GaAs Super Low Noise HEMT

Electrical Characteristics (continued)
CFY66
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Noise figure ¹⁾
V_DS = 2 V, I_D = 10 mA, f = 12 GHz
CFY66-08, -08P
NF
dB
-
0.7
0.8
CFY66-10, 10P
-
0.9
1.0
Associated gain. ¹⁾
V_DS = 2 V, I_D = 10 mA, f = 12 GHz
CFY66-08, -08P
G_a
dB
10.0 11.0 -
CFY66-10, 10P
9.5 10.5 -
Output power at 1 dB gain compression ²⁾ P_1dB
V_DS = 2 V, I_D = 20 mA, f = 12 GHz
CFY66-06, -08, -10
-
11.0 -
dBm
CFY66-08P, -10P
10.0 11.0 -
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power characteristics given for optimum output power matching conditions (fixed
generic matching, no fine-tuning).
Semiconductor Group
4 of 8
Draft D, September 99