CFY66 Datasheet, PDF (3/7 Pages) Infineon Technologies AG – HiRel K-Band GaAs Super Low Noise HEMT

CFY66
Electrical Characteristics (at T_A=25°C; unless otherwise specified)
Parameter
DC Characteristics
Drain-source saturation current
V_DS = 2 V, V_GS = 0 V
Gate threshold voltage
V_DS = 2 V, I_D = 1 mA
Drain current at pinch-off
V_DS = 1.5 V, V_GS = - 3 V
Gate leakage current at pinch-off
V_DS = 1.5 V, V_GS = - 3 V
Transconductance
V_DS = 2 V, I_D = 10 mA
Gate leakage current at operation
V_DS = 2 V, I_D = 10 mA
Thermal resistance
junction to soldering point
Symbol
min.
Values
Unit
typ. max.
I_Dss
-V_Gth
I_Dp
10
30
60
mA
0.2 0.7
2.0 V
-
< 50 -
µA
-I_Gp
-
< 50 200 µA
g_m10
40
55
-
mS
-I_G10
-
< 0.5 2
µA
R_{th JS}
-
450 -
K/W
Semiconductor Group
3 of 8
Draft D, September 99