BUZ31H Datasheet, PDF (4/10 Pages) Infineon Technologies AG – SIPMOS Power Transistor

BUZ 31 H
Electrical Characteristics, at T_j = 25˚C, unless otherwise specified
Parameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward current
I_S
T_C = 25 ˚C
-
Inverse diode direct current,pulsed
I_SM
T_C = 25 ˚C
-
Inverse diode forward voltage
V_SD
V_GS = 0 V, I_F = 29A
-
Reverse recovery time
t_rr
V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs
-
Reverse recovery charge
Q_rr
V_R = 100 V, I_F=l_S, di_F/dt = 100 A/µs
-
Values
typ.
max.
-
14.5
-
58
1.1
1.6
170
-
1.1
-
Unit
A
V
ns
µC
Rev. 2.5
Page 4
2009-11-09