BUZ31H Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOS Power Transistor

SIPMOS ^® Power Transistor
BUZ 31 H
• N channel
• Enhancement mode
• Avalanche-rated
• Normal Level
. Pb-free lead plating; RoHs compliant
. Halogen-free according to IEC61249-2-21
Type
BUZ 31 H
V_DS
200 V
I_D
14.5 A
R_DS(on)
0.2 Ω
Maximum Ratings
Parameter
Continuous drain current
T_C = 30 ˚C
Pulsed drain current
T_C = 25 ˚C
Avalanche current,limited by T_jmax
Avalanche energy,periodic limited by T_jmax
Avalanche energy, single pulse
I_D = 14.5 A, V_DD = 50 V, R_GS = 25 Ω
L = 1.42 mH, T_j = 25 ˚C
Gate source voltage
ESD-Sensitivity HBM as per MIL-STD 883
Power dissipation
T_C = 25 ˚C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Package
PG-TO-220-3
Pb-free
Yes
Pin 3
S
Symbol
I_D
I_Dpuls
I_AR
E_AR
E_AS
V_GS
P_tot
T_j
T_stg
R_thJC
R_thJA
Values
Unit
A
14.5
58
13.5
9
mJ
200
± 20
V
Class 1
W
95
-55 ... + 150 ˚C
-55 ... + 150
≤ 1.32
K/W
75
E
55 / 150 / 56
Rev. 2.5
Page 1
2009-11-09