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BSP315PL6327HTSA1 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor
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BSP315P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
VDD = -48 V, ID = -1.17 A
Gate to drain charge
VDD = -48 V, ID = -1.17 A
Gate charge total
VDD = -48 V, ID = -1.17 A, VGS = 0 to -10 V
Gate plateau voltage
VDD = -48 V, ID = -1.17 A
Qgs
-
0.7 1.1 nC
Qgd
-
1.8 2.6
Qg
-
5.2 7.8
V(plateau) -
-3.14
-V
Parameter
Reverse Diode
Inverse diode continuous forward current
TA = 25 °C
Inverse diode direct current,pulsed
TA = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = -1.17 A
Reverse recovery time
VR = -30 V, IF=IS , diF/dt = 100 A/µs
Reverse recovery charge
VR = -30 V, IF=lS , diF/dt = 100 A/µs
Symbol
Values
Unit
min. typ. max.
IS
-
- -1.17 A
ISM
-
- -4.68
VSD
- -0.97 -1.3 V
trr
- 30.5 46 ns
Qrr
-
36 54 µC
Rev.1.7
Page 4
2012-11-26
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