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| BSP315PL6327HTSA1 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor | |||
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BSP315P
SIPMOS® Small-Signal-Transistor
Features
Product Summary
⢠P-Channel
⢠Enhancement mode
⢠Avalanche rated
⢠Logic Level
⢠dv/dt rated
Drain source voltage
Drain-Source on-state resistance
Continuous drain current
VDS
RDS(on)
ID
4
Pin 1 Pin2/4 PIN 3
⢠Qualified according to AEC Q101
G
D
S
⢠HalogenÂfree according to IEC61249Â2Â21
-60 V
0.8 â¦
-1.17 A
3
2
1
VPS05163
Type
Package
BSP315P PG-SOT223
Tape and Reel Information Marking
H6327: 1000 pcs/reel
BSP315P
Packaging
Non dry
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
TA = 25 °C
TA = 70 °C
ID
A
-1.17
-0.94
Pulsed drain current
TA = 25 °C
Avalanche energy, single pulse
ID = -1.17 A , VDD = -25 V, RGS = 25 â¦
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
-4.68
24
0.18
6
mJ
kV/µs
IS = -1.17 A, VDS = -48 V, di/dt = 200 A/µs,
Tjmax = 150 °C
Gate source voltage
Power dissipation
TA = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
±20
V
1.8
W
-55...+150
°C
55/150/56
ESD Class; JESD22-A114-HBM
Class 0
Rev.1.7
Page 1
2012-11-26
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