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| BSD314SPE Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS™-P 3 Small-Signal-Transistor | |||
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1 Power dissipation
P tot=f(T A)
0.5
0.375
0.25
0.125
2 Drain current
I D=f(T A); V GSâ¤-10 V
1.6
1.2
0.8
0.4
BSD314SPE
0
0
40
80
120
T A [°C]
3 Safe operating area
I D=f(V DS); T A=25 °C; D =0
parameter: t p
101
1 µs
100 µs
10 µs
100
10-1
1 ms
10 ms
DC
10-2
10-3
0
0 20 40 60 80 100 120 140 160
T A [°C]
4 Max. transient thermal impedance
Z thJA=f(t p)
parameter: D =t p/T
103
0.5
102
0.2
0.1
0.05
101
0.02
0.01
single pulse
100
10-4
10-2
Rev 2.1
10-1
100
101
V DS [V]
10-1
102
10-5 10-4 10-3 10-2 10-1 100 101 102
t p [s]
page 4
2010-03-29
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