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BSD314SPE Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™-P 3 Small-Signal-Transistor
OptiMOS™-P 3 Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according AEC Q101
• 100% Lead-free; RoHS compliant
BSD314SPE
Product Summary
V DS
R DS(on),max
ID
V GS=-10 V
V GS=-4.5 V
30 V
140 mΩ
230
-1.5 A
PG-SOT-363
65
4
Type
BSD314SPE
Package
Tape and Reel Information
PG-SOT-363 L6327: 3000 pcs/ reel
1
2
3
Marking
XDs
Lead Free
Yes
Packing
Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Value
Unit
-1.5
A
-1.2
-6.1
Avalanche energy, single pulse
E AS
I D=-1.5A, R GS=25 Ω
6
mJ
Reverse diode dv /dt
Gate source voltage
Power dissipation1)
Operating and storage temperature
dv /dt
I D=-1.5 A,
V DS=-16V,
di /dt =-200A/µs,
T j,max=150 °C
V GS
P tot
T A=25 °C
T j, T stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
6
kV/µs
±20
V
0.5
W
-55 ... 150
°C
2 (2kV to 4kV)
260 °C
°C
55/150/56
°C
Rev 2.1
page 1
2010-03-29