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BSC014N06NS_13 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
BSC014N06NS
180
120
160
100
140
120
80
100
60
80
60
40
40
20
20
0
0 25 50 75 100 125 150 175
TC [°C]
0
0 25 50 75 100 125 150 175
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
100
1 µs
0.5
10 µs
102
0.2
100 µs
10-1
0.1
1 ms
10 ms
101
DC
0.05
0.02
0.01
10-2
single pulse
100
10-1
10-1
Rev.2.1
100
101
VDS [V]
10-3
102
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-01-29
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