BSC014N06NS_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor

Type
BSC014N06NS
OptiMOS^TM Power-Transistor
Features
Product Summary
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
V_DS
R_DS(on),max
60 V
1.45 mW
• Superior thermal resistance
I_D
100 A
• N-channel
• Qualified according to JEDEC¹⁾ for target applications
Q_OSS
Q_G(0V..10V)
100 ^nC
89 ^nC
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
PG-TDSON-8 FL
enlarged source interconnection
• Higher solder joint reliability due to enlarged source interconnection
Type
Package
Marking
BSC014N06NS
PG-TDSON-8 FL
014N06NS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
100
A
100
V _GS=10 V, T _C=25 °C,
R _thJA =50 K/W²⁾
30
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
400
Avalanche energy, single pulse⁴⁾
E _AS
I _D=50 A, R _GS=25 W
580
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev.2.1
page 1
2013-01-29