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| BSC011N03LSI_13 Datasheet, PDF (4/10 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET | |||
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GSâ¥10 V
BSC011N03LSI
120
120
100
100
80
80
60
60
40
40
20
20
0
0
40
80
120
160
TC [°C]
0
0
40
80
120
160
TC [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
103
limited by on-state
101
resistance
1 µs
10 µs
102
100
0.5
100 µs
1 ms
101
10 ms
DC
10-1
0.2
0.1
0.05
0.02
0.01
100
10-2
single pulse
10-1
10-1
Rev. 2.2
100
101
VDS [V]
10-3
102
10-6
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-05-14
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