BSC011N03LSI_13 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOSTM Power-MOSFET

OptiMOS^TM Power-MOSFET
Features
• Optimized for high performance SMPS
• Integrated monolithic Schottky-like diode
• Very low on-resistance R _DS(on) @ V _GS=4.5 V
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSC011N03LSI
Product Summary
V_DS
R_DS(on),max
I_D
Q_OSS
Q_G(0V..10V)
30 V
1.1 mW
100 A
45 nC
68 nC
PG-TDSON-8
Type
BSC011N03LSI
Package
PG-TDSON-8
Marking
011N03LI
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
100
A
100
100
100
V _GS=10 V, T _A=25 °C,
R _thJA=50 K/W²⁾
37
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
400
Avalanche current, single pulse⁴⁾
I _AS
T _C=25 °C
50
Avalanche energy, single pulse
E _AS
I _D=50 A, R _GS=25 W
100
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
Rev. 2.2
page 1
2013-05-14