BFS466L6 Datasheet, PDF (4/4 Pages) Infineon Technologies AG – NPN Silicon RF TWIN Transistor

BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Noise figure
F
dB
TR1, I_C=5mA, V_CE = 3 V, f = 1.8 GHz, Z_S = Z_Sopt
TR1, I_C=5mA, V_CE = 3 V, f = 3 GHz, Z_S = Z_Sopt
TR2, I_C=3mA, V_CE = 3 V, f = 1.8 GHz, Z_S = Z_Sopt
TR2, I_C=3mA, V_CE = 3 V, f = 3 GHz, Z_S = Z_Sopt
-
1.1
-
-
1.4
-
-
1
-
-
1.4
-
Power gain, maximum available¹⁾
G_ma
TR1, I_C = 20 mA, V_CE = 3 V, Z_S=Z_Sopt, Z_L=Z_Lopt,
f = 1.8 GHz
- 14.5 -
TR1, I_C = 20 mA, V_CE = 3 V, Z_S=Z_Sopt, Z_L=Z_Lopt,
f = 3 GHz
-
10
-
TR2, I_C = 15 mA, V_CE = 3 V, Z_S=Z_Sopt, Z_L=Z_Lopt,
f = 1.8 GHz
- 14.5 -
TR2, I_C = 15 mA, V_CE = 3 V, Z_S=Z_Sopt, Z_L=Z_Lopt,
f = 3 GHz
-
10
-
Transducer gain
TR1, I_C = 20 mA, V_CE = 3 V, Z_S = Z_L = 50Ω,
f = 1.8GHz
TR1, I_C = 20 mA, V_CE = 3 V, Z_S = Z_L = 50Ω,
f = 3GHz
TR2, I_C = 15 mA, V_CE = 3 V, Z_S = Z_L = 50Ω,
f = 1.8GHz
TR2, I_C = 15 mA, V_CE = 3 V, Z_S = Z_L = 50Ω,
f = 3GHz
|S _21e|²
- 12.5 -
-
9
-
- 12.5 -
-
8.5
-
Third order intercept point at output ²⁾
IP₃
TR1, V_CE=3V, I_C=20mA, Z_S=Z_L=50Ω, f=1.8GHz
-
TR2, V_CE=3V, I_C=15mA, Z_S=Z_L=50Ω, f=1.8GHz
-
1dB Compression point, at output
P _-1dB
TR1, I_C=20mA, V_CE=3V, Z_S=Z_L=50Ω, f=1.8GHz
-
TR1, I_C=15mA, V_CE=3V, Z_S=Z_L=50Ω, f=1.8GHz
-
1_{Gma = |S21e / S12e| (k-(k²-1)}1/2₎
2IP3 _{value depends on termination of all intermodulation frequency components.}
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
4
28
24.5
12
9
dBm
-
-
-
-
Sep-01-2003