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BFS466L6 Datasheet, PDF (3/4 Pages) Infineon Technologies AG – NPN Silicon RF TWIN Transistor
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BFS466L6
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
TR1, IC = 1 mA, IB = 0
TR2, IC = 1 mA, IB = 0
Collector-emitter cutoff current
TR1, VCE = 15 V, VBE = 0
TR2, VCE = 15 V, VBE = 0
V(BR)CEO
4.5
5
V
-
6
9
-
ICES
µA
-
-
10
-
-
10
Collector-base cutoff current
TR1, VCB = 5 V, IE = 0
TR2, VCB = 5 V, IE = 0
Emitter-base cutoff current
TR1, VEB = 0,5 V, IC = 0
TR2, VEB = 1 V, IC = 0
ICBO
IEBO
nA
-
- 100
-
- 100
µA
-
-
1
-
-
1
DC current gain
TR1, IC = 20 mA, VCE = 3 V
TR2, IC = 20 mA, VCE = 3 V
hFE
-
- 130 -
90 130 160
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
fT
TR1, IC = 30 mA, VCE = 3 V, f = 1 GHz
TR2, IC = 15 mA, VCE = 3 V, f = 1 GHz
Collector-base capacitance
Ccb
TR1, VCB = 3 V, f = 1 MHz, emitter grounded
TR2, VCB = 5 V, f = 1 MHz, emitter grounded
Collector emitter capacitance
Cce
TR1, VCE = 3 V, f = 1 MHz, base grounded
TR1, VCE = 3 V, f = 1 MHz, base grounded
Emitter-base capacitance
Ceb
TR1, VEB = 0,5 V, f = 1 MHz, collector grounded
TR2, VEB = 0,5 V, f = 1 MHz, collector grounded
GHz
16 22
-
11 14
-
pF
- 0.33 0.5
-
0.3 0.45
- 0.17 -
- 0.17 -
- 0.57 -
- 0.48 -
3
Sep-01-2003
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