BFR180W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR180W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.18519 fA
VAF = 26.867 V
BF =
IKF =
94.687 -
0.025252 A
NE = 1.9818 -
BR = 20.325 -
VAR = 3.2134 V
NC = 1.6195 -
RBM = 60


IKR =
RB =
RE =
0.012138 A
1.4255

3.7045

CJE = 3.2473 fF
TF =
14.866 ps
VJE = 1.1812 V
XTF = 0.3062 -
ITF = 1.0202 mA PTF = 0
deg
VJC = 1.1812 V
MJC = 0.30423 -
TR = 2.2648 ns
CJS = 0
fF
MJS = 0
-
XTB = 0
-
XTI = 3
-
FC = 0.87906 -
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil-und Satellitentechnik (IMST)
NF = 1.0236 -
ISE = 130.93 fA
NR = 0.93013 -
ISC = 6.1852 fA
IRB = 0.01
mA
RC = 0.56


MJE = 0.41827 -
VTF = 0.22023 V
CJC = 183.69 fF
XCJC = 0.08334 -
VJS = 0.75
V
EG = 1.11
eV
TNOM 300
K
Package Equivalent Circuit:
L_BI =
0.57
nH
L_BO = 0.4
nH
L_EI =
0.43
nH
L_EO = ^0.5
nH
L_CI =
0
nH
L_CO = 0.41
nH
C_BE = 61
fF
C_CB = 101
fF
C_CE = 175
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Jun-13-2001