BFR180W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA)

BFR180W
Electrical Characteristics at T_A = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
I_C = 3 mA, V_CE = 5 V, f = 500 MHz
Collector-base capacitance
V_CB = 5 V, f = 1 MHz
Collector-emitter capacitance
V_CE = 5 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Noise figure
I_C = 1 mA, V_CE = 5 V, Z_S = Z_Sopt ,
f = 900 MHz
f = 1.8 GHz
f_T
5
7
- GHz
C_cb
-
0.3 0.45 pF
C_ce
- 0.22 -
C_eb
-
0.1
-
F
dB
-
2.1
-
- 2.25 -
Power gain, maximum stable ¹⁾
G_ms
I_C = 1 mA, V_CE = 5 V, Z_S = Z_Sopt, Z_L = Z_Lopt ,
f = 900 MHz
f = 1.8 GHz
- 13.5 -
- 10.5 -
Transducer gain

I_C = 1 mA, V_CE = 5 V, Z_S = Z_L = 50 ,
f = 900 MHz
f = 1.8 GHz
|S_21e|²
-
8.5
-
-
6
-
1_{Gms = |S21 / S12|}
3
Jun-13-2001