BFP180W Datasheet, PDF (4/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)

BFP 180W
SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.18519 fA
VAF = 26.867 V
BF =
IKF =
94.687 -
0.025252 A
NF = 1.0236 -
ISE = 130.93 fA
NE = 1.9818 -
BR = 20.325 -
NR = 0.93013 -
VAR = 3.2134 V
NC = 1.6195 -
RBM = 60


IKR =
RB =
RE =
0.012138 A
1.4255

3.7045

ISC = 6.1852 fA
IRB = 0.01
mA
RC = 0.56


CJE = 3.2473 fF
TF =
14.866 ps
VJE = 1.1812 V
XTF = 0.3062 -
MJE = 0.41827 -
VTF = 0.22023 V
ITF = 1.0202 mA PTF = 0
deg CJC = 183.69 fF
VJC = 1.1812 V
MJC = 0.30423 -
XCJC = 0.08334 -
TR = 2.2648 ns
CJS = 0
fF
VJS = 0.75
V
MJS = 0
-
XTB = 0
-
EG = 1.11
eV
XTI = 3
-
FC = 0.87906 -
TNOM 300
K
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitentechnik (IMST)

1996 SIEMENS AG
Package Equivalent Circuit:
L_BI =
0.43
nH
L_BO = 0.47
nH
L_EI =
0.26
nH
L_EO = 0.12
nH
L_CI =
0.06
nH
L_CO = -
nH
C_BE = 68
fF
C_CB = 46
fF
C_CE = 232
fF
Valid up to 6GHz
For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales
office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/products/discrete/index.htm
4
Oct-12-1999