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BFP180W Datasheet, PDF (3/7 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA)
BFP 180W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
AC characteristics (verified by random sampling)
Transition frequency
IC = 3 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz
Collector-emitter capacitance
VCE = 5 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Noise figure
IC = 1 mA, VCE = 5 V, ZS = ZSopt ,
f = 900 MHz
fT
5
7
- GHz
Ccb
- 0.22 0.35 pF
Cce
- 0.27 -
Ceb
-
0.1
-
F
dB
-
2.1
-
f = 1.8 GHz
- 2.25 -
Power gain, maximum stable F)
Gms
IC = 1 mA, VCE = 5 V, ZS = ZSopt, ZL = ZLopt ,
f = 900 MHz
-
15
-
f = 1.8 GHz
- 11.5 -
Transducer gain
 IC = 1 mA, VCE = 5 V, ZS = ZL = 50 ,
f = 900 MHz
f = 1.8 GHz
|S21e|2
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9
-
-
7
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3
Oct-12-1999