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BCR10PN-H6327 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – NPN/PNP Silicon Digital Transistor Array
◁
PNP Type
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
BCR10PN
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
10 3
-40°C
-25°C
25°C
85°C
10 2
125°C
10 1
10
0
10
-4
10 -3
10 -2
10 -1
1
V
0.8
0.7
0.6
-40 °C
-25 °C
0.5
25 °C
85 °C
0.4
125 °C
0.3
0.2
0.1
0
10
-3
10 -2
A
10 -1
IC
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
10 2
V
-40 °C
10 1
-25 °C
25 °C
85 °C
125 °C
10 1
-40 °C
-25 °C
25 °C
V 85 °C
125 °C
10 0
10 0
10
-1
10
-5
10 -4
10 -3
10 -2 A
IC
10 -1
10
-1
10
-5
4
10 -4
10 -3
10 -2 A
IC
10 -1
2011-09-22
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