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| BCR10PN-H6327 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN/PNP Silicon Digital Transistor Array | |||
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BCR10PN
Electrical Characteristics at TA=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics for NPN and PNP Types
Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
Collector-base breakdown voltage
IC = 10 µA, IE = 0
Collector cutoff current
VCB = 40 V, IE = 0
Emitter cutoff current
VEB = 10 V, IC = 0
DC current gain 1)
IC = 5 mA, VCE = 5 V
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
Input off voltage
IC = 100 µA, VCE = 5 V
Input on Voltage
IC = 2 mA, VCE = 0.3 V
Input resistor
Resistor ratio
V(BR)CEO 50
V(BR)CBO 50
ICBO
-
IEBO
-
hFE
30
VCEsat
-
Vi(off)
0.8
Vi(on)
1
R1
7
R1/R2
0.9
-
-V
-
-
- 100 nA
- 0.75 mA
-
--
-
0.3 V
-
1.5
-
2.5
10 13 kâ¦
1 1.1 -
AC Characteristics for NPN and PNP Types
Transition frequency
fT
IC = 10 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
Ccb
VCB = 10 V, f = 1 MHz
- 130 - MHz
-
3
- pF
1) Pulse test: t < 300µs; D < 2%
2
2011-09-22
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