BCP55E6327 Datasheet, PDF (4/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistors

BCP54...-BCP56...
DC current gain h_FE = ƒ(I_C)
V_CE = 2 V
10 ^{3 BCP 54...56}
h _FE 5
100 C
10^{2 25 C}
-50 C
5
10 ¹
5
EHP00268
Collector-emitter saturation voltage
I_C = ƒ(V_CEsat), h_FE = 10
10 ^{4 BCP 54...56}
Ι _C ^mA
10 ³
EHP00271
10 ²
100 C
25 C
-50 C
10 ¹
10 ⁰
10 ⁰
10 ¹
10 ²
10 ³ mA 10 ⁴
Ι_C
Base-emitter saturation voltage
I_C = ƒ(V_BEsat), h_FE = 10
10 ⁰
0
0.2
0.4
0.6 V 0.8
V _CEsat
Collector cutoff current I_CBO = ƒ(T_A)
V_CBO = 30 V
10 ^{4 BCP 54...56}
Ι _C mA
10 ³
10 ²
100 C
25 C
-50 C
10 ¹
EHP00270
10 ^{4 BCP 54...56}
nA
Ι _CBO
10 ³
10 ²
10 ¹
10 ⁰
EHP00269
max
typ
10 ⁰
0
0.2 0.4 0.6 0.8 V 1.2
V _BEsat
10 ^-1
0
4
50
100 C 150
T_A
2011-10-13