BCP55E6327 Datasheet, PDF (2/7 Pages) Infineon Technologies AG – NPN Silicon AF Transistors

BCP54...-BCP56...
Maximum Ratings
Parameter
Collector-emitter voltage
BCP54
BCP55
BCP56
Symbol
V_CEO
Value
45
60
80
Collector-base voltage
BCP54
BCP55
BCP56
V_CBO
45
60
100
Emitter-base voltage
Collector current
Peak collector current, t_p ≤ 10 ms
Base current
Peak base current
Total power dissipation-
T_S ≤ 120°C
V_EBO
5
I_C
1
I_CM
1.5
I_B
100
I_BM
200
P_tot
2
Junction temperature
T_j
150
Storage temperature
T_stg
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
Junction - soldering point¹⁾
R_thJS
≤ 15
1_{For calculation of RthJA please refer to Application Note AN077 (Thermal Resistance Calculation)}
Unit
V
A
mA
W
°C
Unit
K/W
2
2011-10-13