BCM846S_07 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Array

BCM846S
DC current gain h_FE = ƒ(I_C)
V_CE = 5V
10 ³
h _FE ^{5 100 C}
25 C
10^{2 -50 C}
5
EHP00365
Collector-emitter saturation voltage
I_C = ƒ(V_CEsat), h_FE = 20
10 ²
mA
Ι_C
10 ¹
5
100 C
25 C
-50 C
EHP00367
10 ¹
10 ⁰
5
5
10 ⁰
10 ^-2
5 10 ^-1 5 10 ⁰
5 10¹ mA 10 ²
Ι_C
Base-emitter saturation voltage
I_C = ƒ(V_BEsat), h_FE = 20
10 ^-1
0
0.1 0.2 0.3 0.4 V 0.5
V_CEsat
Output characteristics I_C = ƒ(V_CE),
I_B = parameter
10 ²
Ι _{C mA}
10 ¹
5
100 C
25 C
-50 C
EHP00364
10 ⁰
5
10 ^-1
0
0.2 0.4 0.6 0.8
V 1.2
V _BEsat
15
mA
12
11
10
9
8
7
6
5
4
3
2
1
0
0
IB = 40 uA
IB = 36 uA
IB = 32 uA
IB = 28 uA
IB = 24 uA
IB = 20 uA
IB = 16 uA
IB = 12 uA
IB = 8 uA
IB = 4uA
1
2
3
V
5
V_CE
4
2007-04-26