BCM846S_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – NPN Silicon AF Transistor Array

NPN Silicon AF Transistor Array
• Precision matched transistor pair: ∆I_C ≤ 10%
• For current mirror applications
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated Transistors
• Complementary type: BCM856S
• BCM846S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BCM846S
4
5
6
3
2
1
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07178
Type
BCM846S
Marking
Pin Configuration
Package
1Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation-
T_S = 115 °C
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_CM
P_tot
Junction temperature
T_j
Storage temperature
T_stg
1_{Pb-containing package may be available upon special request}
Value
Unit
65
V
80
80
6
100
mA
200
250
mW
150
°C
-65 ... 150
1
2007-04-26