AUIRL7732S2 Datasheet, PDF (4/11 Pages) International Rectifier – DirectFETPower MOSFET

1000
100
60µs PULSE WIDTH
Tj = 25°C
10
TOP
BOTTOM
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
1
0.1
0.1
2.5V
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig. 1 Typical Output Characteristics
16
14
ID = 35A
12
10
TJ = 125°C
8
6
4
TJ = 25°C
2
0
2 4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig. 3 Typical On-Resistance vs. Gate Voltage
1000
100 ^{TJ = -40°C}
TJ = 25°C
TJ = 175°C
10
1
0.1
1
VDS = 25V
60µs PULSE WIDTH
2
3
4
5
6
VGS, Gate-to-Source Voltage (V)
Fig 5. Transfer Characteristics
4
AUIRL7732S2TR
1000
60µs PULSE WIDTH
Tj = 175°C
100
TOP
BOTTOM
VGS
10V
8.0V
6.0V
4.5V
3.5V
3.0V
2.8V
2.5V
10
2.5V
1
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
1000
Fig. 2 Typical Output Characteristics
16
Vgs = 10V
14
12
10
TJ = 125°C
8
6
4
TJ = 25°C
2
0
0 20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig. 4 Typical On-Resistance vs. Drain Current
2.0
ID = 35A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140160 180
TJ , Junction Temperature (°C)
Fig 6. Normalized On-Resistance vs. Temperature
2015-12-11