AUIRL7732S2 Datasheet, PDF (2/11 Pages) International Rectifier – DirectFETPower MOSFET

AUIRL7732S2TR
Thermal Resistance
Symbol
Parameter
R_JA
R_JA
R_JA
R_J-Can
R_J-PCB
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Can 
Junction-to-PCB Mounted
Linear Derating Factor 
Typ.
–––
12.5
20
–––
1.0
Max.
67
–––
–––
3.7
–––
0.27
Units
°C/W
W/°C
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
V_GS(th)
V_GS(th)/T_J
gfs
R_G
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Internal Gate Resistance
40 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.03 ––– V/°C Reference to 25°C, I_D = 1.0mA
–––
–––
5.0
7.5
6.6
10.5
m
V_GS = 10V, I_D = 35A 
V_GS = 4.5V, I_D = 29A 
1.0 1.8 2.5 V
––– -7.1 ––– mV/°C ^{VDS = VGS, ID = 50µA}
64 ––– –––
––– 0.64 –––
S V_DS = 10V, I_D = 35A

I_DSS
Drain-to-Source Leakage Current
––– ––– 5.0
––– ––– 250
µA
V_DS = 40V, V_GS = 0V
V_DS = 40V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
V_GS = 16V
V_GS = -16V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Output Capacitance
––– 22 33
––– 3.3 –––
––– 2.8 –––
––– 13 –––
––– 2.9 –––
––– 15.8 –––
––– 13 –––
––– 21 –––
––– 123 –––
––– 22 –––
––– 37 –––
––– 2020 –––
––– 410 –––
––– 210 –––
––– 1460 –––
––– 365 –––
––– 630 –––
V_DS = 20V
V_GS = 4.5V
nC
I_D = 35A
See Fig. 11
nC VDS = 16V, VGS = 0V
V_DD = 20V
ns
I_D = 35A
R_G = 6.8
V_GS = 4.5V 
V_GS = 0V
V_DS = 25V
ƒ = 1.0 MHz
pF _{VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz}
V_GS = 0V, V_DS = 32V, ƒ = 1.0 MHz
V_GS = 0V, V_DS = 0 to 32V
Notes  through  are on page 3
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2015-12-11