SGP04N60_07 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation

SGP04N60
SGD04N60
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=4A,
V_GE=0/15V,
R _G =67Ω ,
L_σ¹⁾ =180nH,
C_σ¹⁾ =180pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
15
237
70
0.070
0.061
0.131
26 ns
18
284
84
0.081 mJ
0.079
0.160
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V, I_C=4A,
V_GE=0/15V,
R_G=67Ω,
L_σ¹⁾ =180nH,
C_σ¹⁾ =180pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
Unit
max.
22
16
264
104
0.115
0.111
0.226
26 ns
19
317
125
0.132 mJ
0.144
0.277
1) _{Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.}
3
Rev. 2.2 Sep 07