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SGP04N60_07 Datasheet, PDF (11/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation
SGP04N60
SGD04N60
τ1
r1
Tj (t)
p(t)
r1
τ2
r2
r2
τn
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Published by
Infineon Technologies AG,
11
Figure E. Dynamic test circuit
Leakage inductance L σ =180nH
an d Stray capacity Cσ =180pF.
Rev. 2.2 Sep 07