PXAC260602FC Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260602FC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 85 mA, V_GS = 2.62 V,
ƒ = 2690 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
-10
60
-20
50
-30
40
-40
30
IMD Low
-50
IMD Up
ACPR
20
Efficiency
-60
pxac260602fc_g2
10
27 29 31 33 35 37 39 41 43 45 47
Output Power (dBm)
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 85 mA, V_GS = 2.62V,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
2620 IMDL
2655 IMDL
2620 IMDU
2655 IMDU
2690 IMDL
2690 IMDU
-20
-25
-30
-35
-40
pxac260602fc_g3
27 29 31 33 35 37 39 41 43 45 47
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 85 mA
17.5
70
16.5
60
Gain
15.5
50
14.5
13.5
40
Efficiency
30
12.5
2620 MHz
2655 MHz
20
2690 MHz
11.5
pxac260602fc_g4
10
27 29 31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
CW Performance
at various V_DD
I_DQ = 85 mA, ƒ = 2690 MHz
17.5
70
16.5
60
15.5
50
14.5
40
13.5
Vdd = 24V Gain
30
Vdd = 28V Gain
12.5
Vdd = 32V Gain
Vdd = 24V Eff.
20
Vdd = 28V Eff.
11.5
Vdd = 32V Eff.
10
pxac260602fc_g5
27 29 31 33 35 37 39 41 43 45 47 49
Output Power (dBm)
Data Sheet
3 of 8
Rev. 02.2, 2014-05-14