PXAC260602FC Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260602FC
Thermally-Enhanced High Power RF LDMOS FET
60 W, P_3dB @ 28 V, 2620 – 2690 MHz
Description
The PXAC260602FC is a 60-watt LDMOS FET with an asymmetrical
design intended for use in multi-standard cellular power amplifier
applications in the 2620 to 2690 MHz frequency band. Features
include dual-path design, high gain and thermally-enhanced package
with earless flanges. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
Two-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 85 mA, V_GS = 2.62V,
ƒ = 2690 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing,
BW 3.84 MHz
17
60
Gain
16
50
15
40
14
30
Efficiency
13
20
12
pxac260602fc_g1
10
27 29 31 33 35 37 39 41 43 45 47
Output Power (dBm)
RF Characteristics
PXAC260602FC
Package H-37248-4
Features
• Main: Input matched
Peak: Input and output matching
• Asymmetric Doherty design
- Main: P1dB = 15 W Typ
- Peak: P1dB = 50 W Typ
• Typical Pulsed CW performance, 2690 MHz,
28 V, 10 µs pulse width, 10% duty cycle, class AB,
Doherty Configuration
- Output power at P_1dB = 50 W
- Efficiency = 50%
- Gain = 15 dB
• Typical two-carrier WCDMA performance,
2690 MHz, 28 V, 8 dB PAR @ 0.01% CCDF,
Doherty Configuration
- Output power = 5 W
- Efficiency = 40%
- Gain = 15.7 dB
- IMD = –30 dBc
• Capable of handling 10:1 VSWR @28 V, 50 W
(CW) output power
• Integrated ESD protection : Human Body Model,
Class 1B (per JESD22-A114)
• Low thermal resistance
• Pb-free and RoHS compliant
Single-carrier WCDMA Specifications (tested in Infineon Doherty test fixture)
V_DD = 28 V, I_DQ = 85 mA, P_OUT = 5 W avg, V_GS(PK) = V_GS at 300 mA -1.0V, ƒ = 2620 – 2690 MHz, 3GPP signal, channel
bandwidth = 3.84 MHz, peak/average = 10 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Linear Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
_D
ACPR
14
15.7
—
dB
35
39
—
%
—
–31
–28
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.2, 2014-05-14