PTFC260202FC Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz

PTFC260202FC
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-15
45
-20
40
-25
35
-30
30
-35
25
-40
20
-45
IMD Low
15
-50
IMD Up
10
ACPR
-55
Efficiency
5
-60
0
30 31 32 33 34 35 36 37 38 39 40
Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
-20
2690 Upper
2690 Lower
-25
2496 Upper
2496 Lower
-30
-35
-40
30 31 32 33 34 35 36 37 38 39 40
Output Power (dBm)
Single-carrier WCDMA 3GGP Broadband
V_DD = 28 V, I_DQ = 0.17 A, P_OUT = 4 W,
PAR = 10 dB
40
Gain
Efficiency
0
35
IRL
-5
ACPR
30
-10
25
-15
20
-20
15
-25
10
-30
5
-35
0
2480
2520
2560 2600 2640
Frequency (MHz)
2680
-40
2720
Power Sweep, CW
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 0.17 A, ƒ = 2620 MHz
21
70
20
Gain
60
19
50
18
40
17
Efficiency
30
16
20
15
10
14
0
35 36 37 38 39 40 41 42 43 44 45
Output Power (dBm)
Data Sheet
3 of 9
Rev. 03.3, 2016-06-21