PTFC260202FC Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz

PTFC260202FC
Thermally-Enhanced High Power RF LDMOS FET
25 W, 28 V, 2495 – 2690 MHz
Description
The PTFC260202FC integrates two independent 10-watt LDMOS
FETs and is designed for use in cellular amplifier applications in the
2495 to 2690 MHz frequency band. Manufactured with Infineon's
advanced LDMOS process, this device provides excellent thermal
performance and superior reliability.
PTFC260202FC
Package H-37248-4
Two-carrier WCDMA 3GPP Drive-up
V_DD = 28 V, I_DQ = 0.17 A, ƒ = 2620 MHz,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW 3.84 MHz
20
50
19
40
Gain
18
30
17
Efficiency
20
16
10
15
0
30 31 32 33 34 35 36 37 38 39 40
Output Power (dBm)
Features
• Broadband input matching
• Typical CW performance, 2620 MHz, 28 V
- Output power at P_1dB = 25 W
- Efficiency = 57%
- Linear Gain = 19.4 dB
• Capable of handling 10:1 VSWR @28 V, 25 W
(CW) output power
• Integrated ESD protection
• Human Body Model Class 1B (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Specifications (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 170 mA, P_OUT =5 W avg, ƒ₁ = 2615 MHz, ƒ₂ = 2625 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Linear Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G_ps
h_D
IMD
Min Typ
19
20
27.5
30
—
–31.5
Max
—
—
–30
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 03.3, 2016-06-21