PTFB241402F_16 Datasheet, PDF (3/13 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz

PTFB241402F
Typical Performance (data taken in a production test fixture)
CW Performance, Single Side
V_DD = 30 V, I_DQ = 660 mA
CW Sweep at P_1dB, Single Side
V_DD = 30 V, I_DQ = 660 mA
18.0
60
17.0
50
16.0 _Gain
40
15.0
-25 ° C
30
25°C
Efficiency ^{90° C}
14.0
20
40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
17.5
60
Gain
17.0
50
16.5
40
16.0 ^Efficiency
2320 MHz
30
2350 MHz
2380 MHz
15.5
20
40 41 42 43 44 45 46 47 48 49
Output Power (dBm)
Small Signal CW Gain &
Input Return Loss, Single Side
V_DD = 30 V, I_DQ = 660 mA
18.0
17.5
17.0
16.5
16.0
15.5
15.0
2150
Gain
IRL
2250
2350
2450
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
2550
Two-tone Performance
at Various I_DQ, Single Side
ƒ = 2350 MHz, V_DD = 30 V, I_DQ = Varying
-20
560 mA
-25
610 mA
-30
660 mA
-35
710 mA
-40
760 mA
-45
-50
-55
-60
34 36 38 40 42 44 46 48
Average Output Power (dBm)
Data Sheet
3 of 13
Rev. 04.1, 2016-06-15