PTFB241402F_16 Datasheet, PDF (12/13 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 140 W, 2300 – 2400 MHz

PTFB241402F
Package Outline Specifications
Package H-37248-4
2X 4.83±0.51
[.190±0.020]
2X 45° X 2.72
[45° X .107]
(8.89
[.350])
CL
(5.08
[.200])
D1
D2
4X R0.76+-00.3.183
[
R.030
+0.005
-0.015
]
FLANGE 9.78
[.385]
LID 9.40
[.370]
CL
19.43±0.51
[.765±0.020]
G1
G2
SPH 1.57
[.062]
2X 12.70
[.500]
19.81±0.20
[.780±0.008]
4X 3.81
[.150]
1.02
[.040]
0.0381 [.0015] -A-
H-37248-4_po_02_01-09-2013

3.76±0.25
[.148±0.010]
CL
S
20.57
[.810]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
Diagr₂a_.m _PN_ro_imte_as_r—_y u_dn_imle_es_ns_so_ioth_ne_sr_aw_ri_ese_ms_mp_.e_Aci_lf_ti_ee_rd_n:_{ate dimensions are inches.}
3.^1.Al^Ilⁿto^tele^rpra^ren^tc^deⁱs^m±^en0^s.1^io2ⁿ7^s[.^a0ⁿ0^d5]^tou^len^rle^asⁿs^ces^spe^pc^ei^rfie^Ad^So^Mth^Ee^Yrw¹⁴is^.e⁵.^M-1994.
4.^2.Pi^Pns^ri:^mD^a1^r,^yD^d2^im–^edⁿr^sa^ioinⁿs^s; G^ar1^e, ^mG^m2 ^.–^Ag^lta^et^reⁿs^a;^tS^e –^{d im} so^euⁿr^sc^ioeⁿ. ^{s are inches.}
5.^3.Le^Aa^ld^{l t}t^oh^leic^rk^anⁿe^cs^es^s: ^±0.⁰1^.0¹²+⁷0^[.^.0⁰7⁰6⁵/^]–^u0ⁿ.0^le2^s5^sm^sm^pe[^c0^if.ⁱ0^e0^d4^o+^t0^h.^e0^r0^w3^is/–^e0^..001 inch].
6.^4.Go^Plⁱd^nsp^:la^Dti¹n^,g^Dt²hic⁼k^dn^re^asⁱⁿs:^s;1^S.14⁼ ±^so0^u.3^rc8^em^{; G}ic¹r^,o^Gn ²[4⁼5 ^g±^a1^te5^sm^. icroinch].
5. Lead thickness: 0.102 +0.076/–0.025 [0.004+0.003/–0.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch] max.
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
12 of 13
Rev. 04.1, 2016-06-15