PTFA240451E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz

PTFA240451E
Typical Performance (data taken in a production test fixture)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 450 mA, ƒ₁ = 2449 MHz, ƒ₂ = 2450 MHz
-20
-30
-40 ^{3rd Order}
5th Order
-50
-60
7th Order
-70
-80
30 32 34 36 38 40 42 44
Output Power, Avg. (dBm)
Typical P_OUT, Gain & Efficiency (at P-1dB)
vs. Frequency
V_DD = 28 V, I_DQ = 450 mA
16
57
Efficiency
15
55
Gain
14
53
13 _{Output Power}
51
12
2420
2430
2440 2450 2460
Frequency (MHz)
2470
49
2480
IM3 vs. Output Power for Selected Biases
V_DD = 28 V, ƒ₁ = 2449 MHz, ƒ₂ = 2450 MHz
-20
-30
337 mA
-40
-50
-60
450 mA
562 mA
-70
30 32 34 36 38 40 42 44
Output Power, Avg. (dBm )
2-Tone Broadband Performance
V_DD = 28 V, I_DQ = 450 mA, P_OUT Avg. = 43.52 dBm
50
-5
Efficiency
40
-10
30
-15
20 _Gain
-20
10
0
2400
2420
2440
-25
Return Loss
2460
2480
-30
2500
Frequency (MHz)
Data Sheet
3 of 10
Rev. 04, 2008-03-04