PTFA240451E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420-2480 MHz

PTFA240451E
Thermally-Enhanced High Power RF LDMOS FET
45 W, 2420 – 2480 MHz
Description
The PTFA240451E is a thermally-enhanced, 45-watt, internally-
matched GOLDMOS^® FET intended for CDMA2000 and WiMAX
applications from 2420 to 2480 MHz. Thermally-enhanced packaging
provides the coolest operation available. Full gold metallization
ensures excellent device lifetime and reliability.
PTFA240451E
Package H-30265-2
Three-Carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 450 mA, ƒ = 2450 MHz
45
40
35
30
25
20
15
10
5
0
30
Efficiency
ACP Up
-38
ACP Low
-42
ALT Up
-46
-50
-54
-58
-62
Efficiency -66
-70
-74
32 34 36 38 40 42
Output Power, Avg. (dBm)
Features
• Thermally-enhanced, lead-free and
RoHS-compliant packaging
• Broadband internal matching
• Typical two-carrier CDMA performance at 2450
MHz, 28 V
- Average output power = 10 W
- Linear Gain = 14 dB
- Efficiency = 27%
- Adjacent channel power = –45 dBc
• Typical CW performance, 2450 MHz, 28 V
- Output power at P–1dB = 50 W
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
45 W (CW) output power
RF Characteristics
3-Carrier CDMA2000 Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 450 mA, P_OUT = 14 W average, ƒ = 2450 MHz, channel bandwidth = 3.75 MHz; ACPR measured in 30 kHz
bandwidth at ƒ_C ± 2.135 MHz offset
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
—
14
—
dB
η_D
—
31
—
%
ACPR
—
–45
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 04, 2008-03-04