PTFA091503EL_16 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz

Typical Performance
Broadband Performance
V_DD = 30 V, I_DQ = 1.25A, P_OUT = 70 W
50
45
40
35
30
25
20
15
10
910
Efficiency
Return Loss
Gain
920 930 940 950 960
Frequency (MHz)
0
-5
-10
-15
-20
-25
-30
-35
970
PTFA091503EL
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.25 A, ƒ = 960 MHz
20
19
T_CASE = 25°C
T_CASE = 90°C
18
Gain
17
16
15
14
Efficiency
13
35
40
45
50
Output Power (dBm)
70
60
50
40
30
20
10
0
55
Intermodulation Distortion vs.
Output Power
V_DD = 30 V, I_DQ = 1.25 A,
ƒ₁ = 960 MHz, ƒ₂ = 959 MHz
-20
-30
3rd Order
-40
-50
5th
-60
-70
7th
-80
35
40
45
50
55
Output Power, PEP (dBm)
Power Sweep, CW
V_DD = 30 V, ƒ = 960 MHz
19
18
I_DQ = 1.625 A
I_DQ = 1.25 A
17
16
I_DQ = 0.875 A
15
35
40
45
50
55
Output Power (dBm)
Data Sheet
3 of 11
Rev. 04, 2016-06-16