PTFA091503EL_16 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz

PTFA091503EL
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1250 mA, P_OUT = 140 W PEP, ƒ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Gain
Gps
16
17
Drain Efficiency
hD
40
42
Intermodulation Distortion
IMD
—
–30
Max
—
—
–28
Unit
dB
%
dBc
DC Characteristics
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—

V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.07
Operating Gate Voltage
V_DS = 30 V, I_DQ = 1250 mA
V_GS
2.0
2.5
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70 °C, 150 W CW)
Symbol Value
V_DSS
V_GS
T_J
T_STG
R_qJC
65
–0.5 to +12
200
–40 to +150
0.42
Unit
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PTFA091503EL V4 R0
PTFA091503EL V4 R250
Order Code
Package and Description
PTFA091503ELV4R0XTMA1 H-33288-6, bolt-down
PTFA091503ELV4R250XTMA1 H-33288-6, bolt-down
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 11
Rev. 04, 2016-06-16