PTFA091203EL Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFA091203EL
Two-tone Drive Up
V_DD = 30V, I_DQ = 1.05 A
CW Conditions
V_DD = 30V, I_DQ = 1.05 A
-20
-25 ^{960 MHz}
940 MHz
-30 _{920 MHz}
-35
-40
45
20
Efficiency
40
35
960 MHz
19
940 MHz
920 MHz
Efficiency
ga09³⁰1203ef Sept. 2, 2010 12:02:32 PM
18
25
Gain
-45
-50
IMD3 _p1250tfa091¹⁷ _203ef
-55
No¹r⁰nalized to 5¹⁶0 Ohms
-60
5
-65
0
15
33 35 37 39 41 43 45 47 49
36 38 40 42 44 46 48 50
Average Output Power (dBm)
Output Power (dBm)
60
50
40
30
20
10
52
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
910
920
930
940
950
960
970
G
S
Z Source W
R
jX
1.42
–2.36
1.40
–2.21
1.38
–2.07
1.35
–1.92
1.33
–1.78
1.32
–1.64
1.30
–1.50
Z Load W
R
jX
2.43
–3.11
2.41
–2.97
2.39
–2.83
2.37
–2.68
2.36
–2.54
2.34
–2.40
2.33
–2.26
Data Sheet
3 of 10
Z₀ = 50 Ω
970 MHz
910 MHz
Z Source
Z Load
970 MHz
910 MHz
0.1
0. ²
0.3
Rev. 05, 2₀0_.410-11-12