PTFA091203EL Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920-960 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
120 W, 920 – 960 MHz
Description
The PTFA091203EL is a 120-watt, internally-matched FET intended
for use in power amplifier applications in the 920 to 960 MHz band.
This device features internal I/O matching and thermally-enhanced
open cavity ceramic package. Manufactured with Infineon's ad-
vanced LDMOS process, this device provides excellent thermal
performance and superior reliability..
PTFA091203EL
Package H-33288-6
PTFA091203EL
Two-carrier WCDMA Performance
3GPP signal, 10 MHz carrier spacing,
BW = 3.84 MHz, PAR = 8 dB
V_DD = 30 V , I_DQ = 1.05 A
-15
-20
960 MHz
940 MHz
-25 ^{920 MHz}
40
Efficiency
35
30
-30
25
-35
IMD Up
20
-40
15
-45
IMD Low 10
-50
5
-55
0
32 34 36 38 40 42 44 46 48
Output Power (dBm)
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance,
960 MHz, 30 V
- Average output power = 28 W
- Gain = 17 dB
- Efficiency = 27%
- Intermodulation Distortion = –36 dBc
• Typical CW performance, 960 MHz, 30 V
- Output power at P_1dB = 140 W
- Gain = 17 dB
- Efficiency = 54%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
120 W (CW) output power
• Pb-free and RoHS-compliant
RF Characteristics
Two-carrier WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test
fixture)
V_DD = 30 V, I_DQ = 1050 mA, P_OUT = 28 W Avg
ƒ₁ = 950 MHz, ƒ₂ = 960 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8.0 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Gps
—
17
—
dB
Drain Efficiency
hD
—
27
—
%
Intermodulation Distortion
IMD
—
–36
—
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 05, 2010-11-12