PTFA091201EF Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs

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Typical Performance (data taken in a production test fixture)
PTFA091201E
PTFA091201F
CW Sweep in a Broadband Test Fixture
V_DD = 28 V, I_DQ = 750 mA, P_OUT = 50.79 dBm
21
20
19 ^Gain
70
Efficiency
60
50
18
-4105
17
-3205
16
Return Loss _-2305
900 910 920 930 940 950 960 970 980
Frequency (MHz)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 750 mA, ƒ₁ = 959 MHz, ƒ₂ = 960 MHz
-10
-20
-30
3rd Order
-40
-50
5th
-60
7th
-70
37 39 41 43 45 47 49
Output Power, Avg. (dBm)
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 959, ƒ₂ = 960 MHz,
series show I_DQ
-20
-25
-30
-35 ^{525 mA}
-40
750 mA
-45
-50
-55
940 mA
-60
37 39 41 43 45 47 49
Output Power, Avg. (dBm)
Power Sweep
V_DD = 28 V, ƒ = 960 MHz
20.5
I_DQ = 1125 mA
20.0
19.5
19.0
18.5
I_DQ = 750 mA
18.0 ^{IDQ = 375 mA}
17.5
40 42 44 46 48 50 52
Output Power (dBm)
*See Infineon distributor for future availability.
Data Sheet
3 of 10
Rev. 03.1, 2016-06-21